Ampahany IKW50N65ES5XKSA1 IGBT Transistors INDUSTRY 14
♠ Famaritana ny vokatra
| Toetra vokatra | Sanda toetra |
| Mpanamboatra: | Infineon |
| Sokajy vokatra: | IGBT Transistors |
| Teknolojia: | Si |
| Fonosana / tranga: | TO-247-3 |
| fomba fametrahana: | Amin'ny alàlan'ny Hole |
| Fanamboarana: | MITAIZA IRERY NY |
| Mpanangona- Volavolan'ny mpamoaka VCEO Max: | 650 V |
| Volavolan'ny Saturation mpanangona-Emitter: | 1.35 V |
| Vavahady Emitter Voltage ambony indrindra: | 20 V |
| Continuous Collector Current amin'ny 25 C: | 80 A |
| Pd - Fanaparitahana hery: | 274 W |
| Temperature miasa ambany indrindra: | - 40 C |
| Temperature miasa ambony indrindra: | + 175 C |
| Andiany: | TRENCHSTOP 5 S5 |
| Fonosana: | Tube |
| Marika: | Infineon Technologies |
| Vavahady-Emitter leakage ankehitriny: | 100 nA |
| Haavo: | 20,7 mm |
| Halavany: | 15,87 mm |
| Karazana vokatra: | IGBT Transistors |
| Factory Pack Quantity: | 240 |
| Sokafika: | IGBTs |
| Anaram-barotra: | TRENCHSTOP |
| sakany: | 5,31 mm |
| Fizarana # Aliases: | Sary IKW50N65ES5 SP001319682 |
| Lanja iray: | 0,213537 oz |
Ny vidin'ny HighspeedS5technology
•Fitaovana mifamadika malefaka sy malefaka
•VCEsat Very Low, 1.35Vatnominalcurrent
•Fisoloana lalao Plugand amin'ireo IGBT taranaka teo aloha
•650Vbreakdownvoltage
LowgatechargeQG
IGBT miaraka amin'ny RAPID1fastantiparalleldiode feno
•Temperature junction faratampony175°C
•Mendrika araka ny JEDEC ho an'ny fampiharana kendrena
•Pb-freeleadplating;RoHScompliant
•CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/
•Resonantconverters
•Famatsiana herinaratra tsy tapaka
•Weldingconverters
•Frequency converters midtohighrangeswitching
