SI1029X-T1-GE3 MOSFET 60V Vds 20V Vgs SC89-6 N&P PAIR
♠ Famaritana ny vokatra
Toetra vokatra | Sanda toetra |
Mpanamboatra: | Vishay |
Sokajy vokatra: | MOSFET |
RoHS: | tsipiriany |
Teknolojia: | Si |
fomba fametrahana: | SMD/SMT |
Fonosana/Tranga: | SC-89-6 |
Transistor polarity: | N-Channel, P-Channel |
Isan'ny fantsona: | 2 Channel |
Vds - Volan'ny fahatapahan'ny tatatra: | 60 V |
Id - Current Drain Continuous: | 500 mA |
Rds On - Fanoherana loharanon-drano: | 1,4 ohm, 4 ohm |
Vgs - Vavahady-Source Voltage: | - 20 V, + 20 V |
Vgs th - Vavahady-Source Threshold Voltage: | 1 V |
Qg - Vavahady fiampangana: | 750 pC, 1,7 nC |
Temperature miasa ambany indrindra: | - 55 C |
Temperature miasa ambony indrindra: | + 150 C |
Pd - Fanaparitahana hery: | 280 mW |
Fomba fantsona: | hatsarana |
Anaram-barotra: | TrenchFET |
Fonosana: | Nisangodingodina |
Fonosana: | Tapaho ny kasety |
Fonosana: | MouseReel |
Marika: | Vishay Semiconductors |
Fanamboarana: | lafiny roa |
Transconductance mandroso - Min: | 200 mS, 100 mS |
Haavo: | 0,6 mm |
Halavany: | 1,66 mm |
Karazana vokatra: | MOSFET |
Andiany: | SI1 |
Factory Pack Quantity: | 3000 |
Sokafika: | MOSFETs |
Karazana Transistor: | 1 N-Channel, 1 P-Channel |
Fotoana fanemorana mahazatra: | 20 ns, 35 ns |
Fotoana fanemorana mahazatra: | 15 ns, 20 ns |
sakany: | 1,2 mm |
Fizarana # Aliases: | Sary SI1029X-GE3 |
Lanja iray: | 32 mg |
• Tsy misy halogen araka ny famaritana IEC 61249-2-21
• TrenchFET® Power MOSFETs
• Dian-tongotra tena kely
• High-Side Switching
• Ambany amin'ny fanoherana:
N-Channel, 1.40 Ω
P-Channel, 4 Ω
• Fehezana ambany: ± 2 V (typ.)
• Haingam-pandeha haingana: 15 ns (typ.)
• Vavahady-Source ESD Protected: 2000 V
• Mifanaraka amin'ny RoHS Directive 2002/95/EC
• Soloy nomerika Transistor, Level-Shifter
• Rafitra miasa amin'ny bateria
• Circuit mpanova famatsiana herinaratra